Browse by UCL people
Group by: Type | Date
Number of items: 30.
Article
Buckwell, M;
Kirchner-Burles, C;
Owen, RE;
Neville, TP;
Weaving, JS;
Brett, DJL;
Shearing, PR;
(2023)
Failure and hazard characterisation of high-power lithium-ion cells via coupling accelerating rate calorimetry with in-line mass spectrometry, statistical and post-mortem analyses.
Journal of Energy Storage
, 65
, Article 107069. 10.1016/j.est.2023.107069.
(In press).
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Buckwell, M;
Ng, WH;
Mannion, DJ;
Cox, HRJ;
Hudziak, S;
Mehonic, A;
Kenyon, AJ;
(2021)
Neuromorphic Dynamics at the Nanoscale in Silicon Suboxide RRAM.
Frontiers in Nanotechnology
, 3
, Article 699037. 10.3389/fnano.2021.699037.
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Buckwell, M;
Montesi, L;
Hudziak, S;
Mehonic, A;
Kenyon, AJ;
(2015)
Conductance tomography of conductive filaments in intrinsic silicon-rich silica RRAM.
Nanoscale
, 7
(43)
pp. 18030-18035.
10.1039/c5nr04982b.
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Buckwell, M;
Ng, WH;
Hudziak, S;
Mehonic, A;
Lanza, M;
Kenyon, AJ;
(2019)
Improving the Consistency of Nanoscale Etching for Atomic Force Microscopy Tomography Applications.
Frontiers in Materials
, 6
, Article 203. 10.3389/fmats.2019.00203.
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Carta, D;
Guttmann, P;
Regoutz, A;
Khiat, A;
Serb, A;
Gupta, I;
Mehonic, A;
... Prodromakis, T; + view all
(2016)
X-ray spectromicroscopy investigation of soft and hard breakdown in RRAM devices.
Nanotechnology
, 27
(34)
, Article 345705. 10.1088/0957-4484/27/34/345705.
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Chen, S;
Jiang, L;
Buckwell, M;
Jing, X;
Ji, Y;
Grustan-Gutierrez, E;
Hui, F;
... Lanza, M; + view all
(2018)
On the Limits of Scalpel AFM for the 3D Electrical Characterization of Nanomaterials.
Advanced Functional Materials
, 28
(52)
, Article 1802266. 10.1002/adfm.201802266.
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Cox, Horatio RJ;
Sharpe, Matthew K;
McAleese, Callum;
Laitinen, Mikko;
Dulai, Jeevan;
Smith, Richard;
England, Jonathan;
... Kenyon, Anthony J; + view all
(2024)
The Role of Hydrogen in ReRAM.
Advanced Materials
, 36
(52)
, Article 2408437. 10.1002/adma.202408437.
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Cox, HRJ;
Buckwell, M;
Ng, WH;
Mannion, DJ;
Mehonic, A;
Shearing, PR;
Fearn, S;
(2021)
A nanoscale analysis method to reveal oxygen exchange between environment, oxide, and electrodes in ReRAM devices.
APL Materials
, 9
, Article 111109. 10.1063/5.0070046.
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Duchamp, M;
Migunov, V;
Tavabi, AH;
Mehonic, A;
Buckwell, M;
Munde, M;
Kenyon, AJ;
(2016)
In situ transmission electron microscopy of resistive switching in thin silicon oxide layers.
Resolution and Discovery
, 1
(1)
pp. 27-33.
10.1556/2051.2016.00036.
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Fransson, M;
Broche, L;
Buckwell, M;
Pfaff, J;
Reid, H;
Kirchner-Burles, C;
Pham, M;
... Shearing, P; + view all
(2023)
Sidewall breach during lithium-ion battery thermal runaway triggered by cell-to-cell propagation visualized using high-speed X-ray imaging.
Journal of Energy Storage
, 71
, Article 108088. 10.1016/j.est.2023.108088.
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Joksas, D;
Freitas, P;
Chai, Z;
Ng, WH;
Buckwell, M;
Zhang, WD;
Kenyon, AJ;
(2019)
Committee Machines—A Universal Method to Deal with Non-Idealities in RRAM-Based Neural Networks.
Nature Communications
, 11
, Article 4273. 10.1038/s41467-020-18098-0.
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Kenyon, AJ;
Munde, M;
Ng, W;
Buckwell, M;
Joksas, D;
Mehonic, A;
(2018)
The interplay between structure and function in redox-based resistance switching.
Faraday Discussions
10.1039/C8FD00118A.
(In press).
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Kirchner-Burles, Charles;
Fordham, Arthur;
Reid, Hamish T;
Johnson, Michael;
Buckwell, Mark;
Iacoviello, Francesco;
Coke, Kofi;
... Robinson, James B; + view all
(2025)
Safety and performance implications of lithium plating induced by sub-zero temperature cycling of lithium-ion batteries.
Journal of Power Sources
, 660
, Article 238565. 10.1016/j.jpowsour.2025.238565.
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Lanza, M;
Wong, HSP;
Pop, E;
Ielmini, D;
Strukov, D;
Regan, BC;
Larcher, L;
... Shi, Y; + view all
(2019)
Recommended Methods to Study Resistive Switching Devices.
Advanced Electronic Materials
, 5
(1)
, Article 1800143. 10.1002/aelm.201800143.
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Mehonic, Adnan;
Ielmini, Daniele;
Roy, Kaushik;
Mutlu, Onur;
Kvatinsky, Shahar;
Serrano-Gotarredona, Teresa;
Linares-Barranco, Bernabe;
... Waser, Rainer; + view all
(2024)
Roadmap to neuromorphic computing with emerging technologies.
APL Materials
, 12
(10)
, Article 109201. 10.1063/5.0179424.
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Mehonic, A;
Buckwell, M;
Montesi, L;
Garnett, L;
Hudziak, S;
Fearn, S;
Chater, R;
... Kenyon, AJ; + view all
(2015)
Structural changes and conductance thresholds in metal-free intrinsic SiOx resistive random access memory.
Journal of Applied Physics
, 117
(12)
10.1063/1.4916259.
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Mehonic, A;
Buckwell, M;
Montesi, L;
Munde, MS;
Gao, D;
Hudziak, S;
Chater, RJ;
... Kenyon, AJ; + view all
(2016)
Nanoscale transformations in metastable, amorphous, silicon-rich silica.
Advanced Materials
, 28
(34)
pp. 7486-7493.
10.1002/adma.201601208.
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Mehonic, A;
Joksas, D;
Ng, W;
Buckwell, M;
Kenyon, A;
(2019)
Simulation of Inference Accuracy Using Realistic RRAM Devices.
Frontiers in Neuroscience
, 13
, Article 593. 10.3389/fnins.2019.00593.
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Mehonic, A;
Munde, MS;
Ng, WH;
Buckwell, M;
Montesi, L;
Bosman, M;
Shluger, AL;
(2017)
Intrinsic resistance switching in amorphous silicon oxide for high performance SiOx ReRAM devices.
Microelectronic Engineering
, 178
pp. 98-103.
10.1016/j.mee.2017.04.033.
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Montesi, L;
Buckwell, M;
Zarudnyi, K;
Garnett, L;
Hudziak, S;
Mehonic, A;
Kenyon, AJ;
(2016)
Nanosecond analog programming of substoichiometric silicon oxide resistive RAM.
IEEE Transactions on Nanotechnology
, 15
(3)
pp. 428-434.
10.1109/TNANO.2016.2539925.
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Munde, MS;
Mehonic, A;
Ng, WH;
Buckwell, M;
Montesi, L;
Bosman, M;
Shluger, A;
(2017)
Intrinsic Resistance Switching in Amorphous Silicon Suboxides: The Role of Columnar Microstructure.
Scientific Reports
, 7
, Article 9274. 10.1038/s41598-017-09565-8.
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Ng, W;
Mehonic, A;
Buckwell, M;
Montesi, L;
Kenyon, AJ;
(2018)
High Performance Resistance Switching Memory Devices Using Spin-on Silicon Oxide.
IEEE Transactions on Nanotechnology
, 17
(5)
pp. 884-888.
10.1109/TNANO.2017.2789019.
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Pfaff, J;
Fransson, M;
Broche, L;
Buckwell, M;
Finegan, DP;
Moser, S;
Schopferer, S;
... Rack, A; + view all
(2023)
In situ chamber for studying battery failure using high-speed synchrotron radiography.
Journal of synchrotron radiation
, 30
pp. 192-199.
10.1107/S1600577522010244.
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Radhakrishnan, Anand NP;
Buckwell, Mark;
Pham, Martin;
Finegan, Donal P;
Rack, Alexander;
Hinds, Gareth;
Brett, Dan JL;
(2022)
Quantitative spatiotemporal mapping of thermal runaway propagation rates in lithium-ion cells using cross-correlated Gabor filtering.
Energy & Environmental Science
10.1039/d1ee03430h.
(In press).
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Reid, Hamish T;
Kesuma, Inez;
Buckwell, Mark;
Robinson, James B;
Shearing, Paul R;
(2024)
High-Speed Imaging for Investigating Battery Failure Mechanisms.
The Electrochemical Society Interface
, 33
(3)
pp. 77-80.
10.1149/2.F11243IF.
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Sadi, T;
Mehonic, A;
Montesi, L;
Buckwell, M;
Kenyon, A;
Asenov, A;
(2018)
Investigation of Resistance Switching in SiOx RRAM Cells Using a 3D Multi-Scale Kinetic Monte Carlo Simulator.
Journal of Physics: Condensed Matter
, 30
(8)
, Article 084005. 10.1088/1361-648X/aaa7c1.
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Venturelli, M;
Broche, L;
Buckwell, M;
Pfaff, J;
Fordham, A;
Kirchner-Burles, C;
Reid, HT;
... Fransson, M; + view all
(2025)
Insights into thermal runaway mechanisms: Fast tomography analysis of metal agglomerates in lithium-ion batteries.
Journal of Energy Storage
, 131
(Part A)
, Article 117122. 10.1016/j.est.2025.117122.
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Yang, Y;
Takahashi, Y;
Tsurumaki-Fukuchi, A;
Arita, M;
Moors, M;
Buckwell, M;
Mehonic, A;
(2017)
Probing electrochemistry at the nanoscale: in situ TEM and STM characterizations of conducting filaments in memristive devices.
Journal of Electroceramics
, 39
(1-4)
pp. 73-93.
10.1007/s10832-017-0069-y.
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Zarudnyi, K;
Mehonic, A;
Montesi, L;
Buckwell, M;
Hudziak, S;
Kenyon, AJ;
(2018)
Spike-Timing Dependent Plasticity in Unipolar Silicon Oxide RRAM Devices.
Frontiers in Neuroscience
, 12
, Article 57. 10.3389/fnins.2018.00057.
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Thesis
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Buckwell, Mark;
(2018)
Probing the resistance switching mechanism in silicon suboxide memory devices.
Doctoral thesis (Ph.D), UCL (University College London).
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