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Neuromorphic Dynamics at the Nanoscale in Silicon Suboxide RRAM

Buckwell, M; Ng, WH; Mannion, DJ; Cox, HRJ; Hudziak, S; Mehonic, A; Kenyon, AJ; (2021) Neuromorphic Dynamics at the Nanoscale in Silicon Suboxide RRAM. Frontiers in Nanotechnology , 3 , Article 699037. 10.3389/fnano.2021.699037. Green open access

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Abstract

Resistive random-access memories, also known as memristors, whose resistance can be modulated by the electrically driven formation and disruption of conductive filaments within an insulator, are promising candidates for neuromorphic applications due to their scalability, low-power operation and diverse functional behaviors. However, understanding the dynamics of individual filaments, and the surrounding material, is challenging, owing to the typically very large cross-sectional areas of test devices relative to the nanometer scale of individual filaments. In the present work, conductive atomic force microscopy is used to study the evolution of conductivity at the nanoscale in a fully CMOS-compatible silicon suboxide thin film. Distinct filamentary plasticity and background conductivity enhancement are reported, suggesting that device behavior might be best described by composite core (filament) and shell (background conductivity) dynamics. Furthermore, constant current measurements demonstrate an interplay between filament formation and rupture, resulting in current-controlled voltage spiking in nanoscale regions, with an estimated optimal energy consumption of 25 attojoules per spike. This is very promising for extremely low-power neuromorphic computation and suggests that the dynamic behavior observed in larger devices should persist and improve as dimensions are scaled down.

Type: Article
Title: Neuromorphic Dynamics at the Nanoscale in Silicon Suboxide RRAM
Open access status: An open access version is available from UCL Discovery
DOI: 10.3389/fnano.2021.699037
Publisher version: https://doi.org/10.3389/fnano.2021.699037
Language: English
Additional information: © 2021 Buckwell, Ng, Mannion, Cox, Hudziak, Mehonic and Kenyon. This is an open-access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/).
Keywords: Conductive atomic force microscopy, filament, plasticity, spiking, neuromorphic, RRAM, memristor, silicon
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Chemical Engineering
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Engineering Science Faculty Office
URI: https://discovery.ucl.ac.uk/id/eprint/10140888
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