Buckwell, M;
Montesi, L;
Hudziak, S;
Mehonic, A;
Kenyon, AJ;
(2015)
Conductance tomography of conductive filaments in intrinsic silicon-rich silica RRAM.
Nanoscale
, 7
(43)
pp. 18030-18035.
10.1039/c5nr04982b.
Preview |
Text
Nanoscale 2015.pdf Download (1MB) | Preview |
Abstract
We present results from an imaging study of filamentary conduction in silicon suboxide resistive RAM devices. We used a conductive atomic force microscope to etch through devices while measuring current, allowing us to produce tomograms of conductive filaments. To our knowledge this is the first report of such measurements in an intrinsic resistance switching material.
| Type: | Article |
|---|---|
| Title: | Conductance tomography of conductive filaments in intrinsic silicon-rich silica RRAM |
| Location: | England |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1039/c5nr04982b |
| Publisher version: | http://dx.doi.org/10.1039/c5nr04982b |
| Language: | English |
| Additional information: | Open Access Article. This Open Access Article is licensed under a Creative Commons Attribution 3.0 Unported Licence |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Chemical Engineering UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/1474781 |
Archive Staff Only
 |
View Item |
