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Intrinsic resistance switching in amorphous silicon oxide for high performance SiOx ReRAM devices

Mehonic, A; Munde, MS; Ng, WH; Buckwell, M; Montesi, L; Bosman, M; Shluger, AL; (2017) Intrinsic resistance switching in amorphous silicon oxide for high performance SiOx ReRAM devices. Microelectronic Engineering , 178 pp. 98-103. 10.1016/j.mee.2017.04.033. Green open access

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Abstract

In this paper, we present a study of intrinsic bipolar resistance switching in metal-oxide-metal silicon oxide ReRAM devices. Devices exhibit low electroforming voltages (typically − 2.6 V), low switching voltages (± 1 V for setting and resetting), excellent endurance of > 107 switching cycles, good state retention (at room temperature and after 1 h at 260 °C), and narrow distributions of switching voltages and resistance states. We analyse the microstructure of amorphous silicon oxide films and postulate that columnar growth, which results from sputter-deposition of the oxide on rough surfaces, enhances resistance switching behavior.

Type: Article
Title: Intrinsic resistance switching in amorphous silicon oxide for high performance SiOx ReRAM devices
Location: Potsdam, GERMANY
Open access status: An open access version is available from UCL Discovery
DOI: 10.1016/j.mee.2017.04.033
Publisher version: http://doi.org/10.1016/j.mee.2017.04.033
Language: English
Additional information: © 2017 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/).
Keywords: Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Nanoscience & Nanotechnology, Optics, Physics, Applied, Engineering, Science & Technology - Other Topics, Physics, ReRAM, Silicon oxide, Intrinsic, Resistance switching, STEM, MEMRISTOR, MEMORIES
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Chemical Engineering
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > Dept of Physics and Astronomy
URI: https://discovery.ucl.ac.uk/id/eprint/1554506
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