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Structural changes and conductance thresholds in metal-free intrinsic SiOx resistive random access memory

Mehonic, A; Buckwell, M; Montesi, L; Garnett, L; Hudziak, S; Fearn, S; Chater, R; ... Kenyon, AJ; + view all (2015) Structural changes and conductance thresholds in metal-free intrinsic SiOx resistive random access memory. Journal of Applied Physics , 117 (12) 10.1063/1.4916259. Green open access

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Abstract

We present an investigation of structural changes in silicon-rich silicon oxide metal-insulator-metal resistive RAM devices. The observed unipolar switching, which is intrinsic to the bulk oxide material and does not involve movement of metal ions, correlates with changes in the structure of the oxide. We use atomic force microscopy, conductive atomic force microscopy, x-ray photoelectron spectroscopy, and secondary ion mass spectroscopy to examine the structural changes occurring as a result of switching. We confirm that protrusions formed at the surface of samples during switching are bubbles, which are likely to be related to the outdiffusion of oxygen. This supports existing models for valence-change based resistive switching in oxides. In addition, we describe parallel linear and nonlinear conduction pathways and suggest that the conductance quantum, G0, is a natural boundary between the high and low resistance states of our devices.

Type: Article
Title: Structural changes and conductance thresholds in metal-free intrinsic SiOx resistive random access memory
Open access status: An open access version is available from UCL Discovery
DOI: 10.1063/1.4916259
Publisher version: http://dx.doi.org/10.1063/1.4916259
Language: English
Additional information: © 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in G. A. Gibson et al., Appl. Phys. Lett. 86, 051902 (2005) and may be found at http://dx.doi.org/10.1063/1.4916259.
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Chemical Engineering
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/1471750
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