Browse by UCL people
Group by: Type | Date
Number of items: 36.
Article
Bird, Jonathan P;
Cheng, Jinguang;
Duan, Chun-gang;
Frederiksen, Thomas;
Kahl, Gerhard;
Pacchioni, Gianfranco;
Park, Je-Geun;
... Dowben, Peter A; + view all
(2025)
Future of Condensed Matter Physics for the Next 10 Years.
Journal of Physics: Condensed Matter
10.1088/1361-648x/ae0be1.
(In press).
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Brazdova, V;
Bowler, DR;
Sinthiptharakoon, K;
Studer, P;
Rahnejat, A;
Curson, NJ;
Schofield, SR;
(2017)
Exact location of dopants below the Si(001): H surface from scanning tunneling microscopy and density functional theory.
Physical Review B
, 95
(7)
, Article 075408. 10.1103/PhysRevB.95.075408.
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Constantinou, Procopios;
Stock, Taylor JZ;
Crane, Eleanor;
Kölker, Alexander;
Van Loon, Marcel;
Li, Juerong;
Fearn, Sarah;
... Schofield, Steven R; + view all
(2023)
Momentum space imaging of ultra-thin electron liquids in δ-doped silicon.
Advanced Science
, 10
(27)
, Article 2302101. 10.1002/advs.202302101.
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Constantinou, Procopios;
Stock, Taylor JZ;
Tseng, Li-Ting;
Kazazis, Dimitrios;
Muntwiler, Matthias;
Vaz, Carlos AF;
Ekinci, Yasin;
... Schofield, Steven R; + view all
(2024)
EUV-induced hydrogen desorption as a step towards large-scale silicon quantum device patterning.
Nature Communications
, 15
, Article 694. 10.1038/s41467-024-44790-6.
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Gramse, G;
Kölker, A;
Lim, T;
Stock, TJZ;
Solanki, H;
Schofield, SR;
Brinciotti, E;
... Curson, NJ; + view all
(2017)
Nondestructive imaging of atomically thin nanostructures buried in silicon.
Science Advances
, 3
(6)
e1602586-e1602586.
10.1126/sciadv.1602586.
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Hofmann, Emily VS;
Stock, Taylor JZ;
Warschkow, Oliver;
Conybeare, Rebecca;
Curson, Neil J;
Schofield, Steven R;
(2023)
Room Temperature Incorporation of Arsenic Atoms into the Germanium (001) Surface.
Angewandte Chemie
10.1002/ange.202213982.
(In press).
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Hofmann, Emily VS;
Stock, Taylor JZ;
Warschkow, Oliver;
Conybeare, Rebecca;
Curson, Neil J;
Schofield, Steven R;
(2023)
Room Temperature Incorporation of Arsenic Atoms into the Germanium (001) Surface**.
Angewandte Chemie International Edition
10.1002/anie.202213982.
(In press).
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Hofmann, EVS;
Scalise, E;
Montalenti, F;
Stock, TJZ;
Schofield, SR;
Capellini, G;
Miglio, L;
... Klesse, WM; + view all
(2021)
The formation of a Sn monolayer on Ge(1 0 0) studied at the atomic scale.
Applied Surface Science
, 561
, Article 149961. 10.1016/j.apsusc.2021.149961.
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Koczorowski, W;
Grzela, T;
Puchalska, A;
Radny, MW;
Jurczyszyn, L;
Schofield, SR;
Czajka, R;
(2018)
Higher order reconstructions of the Ge(001) surface induced by a Ba layer.
Applied Surface Science
, 435
pp. 438-443.
10.1016/j.apsusc.2017.11.058.
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Koczorowski, W;
Grzela, T;
Radny, MW;
Schofield, SR;
Capellini, G;
Czajka, R;
Schroeder, T;
(2015)
Ba termination of Ge(001) studied with STM.
Nanotechnology
, 26
(15)
, Article 155701. 10.1088/0957-4484/26/15/155701.
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Koczorowski, W;
Puchalska, A;
Grzela, T;
Jurczyszyn, L;
Schofield, SR;
Czajka, R;
Curson, NJ;
(2016)
STM and DFT study on formation and characterization of Ba-incorporated phases on a Ge(001) surface.
Physical Review B - Condensed Matter and Materials Physics
, 93
(19)
, Article 195304. 10.1103/PhysRevB.93.195304.
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Koczorowski, W;
Puchalska, A;
Grzela, T;
Radny, MW;
Jurczyszyn, L;
Schofield, SR;
Czajka, R;
(2015)
Initial growth of Ba on Ge(001): An STM and DFT study.
Physical Review B
, 91
(23)
, Article 235319. 10.1103/PhysRevB.91.235319.
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Laborda Lalaguna, P;
Hedgeland, H;
Ryan, P;
Warschkow, O;
Muntwiler, M;
Teplyakov, A;
Schofield, SR;
(2021)
Determination of the preferred reaction pathway of acetophenone on Si(001) using photoelectron diffraction.
Journal of Physics: Condensed Matter
10.1088/1361-648X/abe6dd.
(In press).
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Lundgren, Eric AS;
Byron, Carly;
Constantinou, Procopios;
Stock, Taylor JZ;
Curson, Neil J;
Thomsen, Lars;
Warschkow, Oliver;
... Schofield, Steven R; + view all
(2023)
Adsorption and Thermal Decomposition of Triphenyl Bismuth on Silicon (001).
The Journal of Physical Chemistry C
, 127
(33)
16433 -16441.
10.1021/acs.jpcc.3c03916.
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Matmon, G;
Ginossar, E;
Villis, B;
Koelker, A;
Lim, T;
Solanki, H;
Schofield, S;
... Aeppli, G; + view all
(2018)
Two- to three-dimensional crossover in a dense electron liquid in silicon.
Physical Review B
, 97
(155306)
10.1103/PhysRevB.97.155306.
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O'Donnell, KM;
Byron, C;
Moore, G;
Thomsen, L;
Warschkow, O;
Teplyakov, AV;
Schofield, SR;
(2019)
Dissociation of CH₃–O as a Driving Force for Methoxyacetophenone Adsorption on Si(001).
The Journal of Physical Chemistry C
, 123
(36)
pp. 22239-22249.
10.1021/acs.jpcc.9b04954.
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O'Donnell, KM;
Hedgeland, H;
Moore, G;
Suleman, A;
Siegl, M;
Thomsen, L;
Warschkow, O;
(2016)
Orientation and stability of a bi-functional aromatic organic molecular adsorbate on silicon.
Physical Chemistry Chemical Physics
, 18
(39)
pp. 27290-27299.
10.1039/c6cp04328c.
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O'Donnell, KM;
Warschkow, O;
Suleman, A;
Fahy, A;
Thomsen, L;
Schofield, SR;
(2015)
Manipulating the orientation of an organic adsorbate on silicon: a NEXAFS study of acetophenone on Si(0 0 1).
Journal of Physics: Condensed Matter
, 27
(5)
, Article 054002. 10.1088/0953-8984/27/5/054002.
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Oberbeck, L;
Reusch, TCG;
Hallam, T;
Schofield, SR;
Curson, NJ;
Simmons, MY;
(2014)
Imaging of buried phosphorus nanostructures in silicon using scanning tunneling microscopy.
Applied Physics Letters
, 104
, Article 253102. 10.1063/1.4884654.
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Radny, MW;
Shah, GA;
Schofield, SR;
Smith, PV;
Curson, NJ;
(2009)
Comment on "Valence Surface Electronic States on Ge(001)" Reply.
PHYS REV LETT
, 103
(18)
, Article 189702. 10.1103/PhysRevLett.103.189702.
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Radny, MW;
Shah, GA;
Schofield, SR;
Smith, PV;
Curson, NJ;
(2008)
Valence surface electronic states on Ge(001).
PHYS REV LETT
, 100
(24)
, Article 246807. 10.1103/PhysRevLett.100.246807.
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Schofield, S;
Bin Subhan, MK;
Suleman, A;
Moore, G;
Phu, P;
Hoesch, M;
Kurebayashi, H;
(2021)
Charge density waves in electron-doped molybdenum disulfide.
Nano Letters: a journal dedicated to nanoscience and nanotechnology
10.1021/acs.nanolett.1c00677.
(In press).
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Schofield, Steven;
LUNDGREN, Eric;
Conybeare, Rebecca;
Stock, Taylor;
Curson, Neil;
Warschkow, Oliver;
(2023)
Bismuth trichloride as a molecular precursor for silicon doping.
Applied Physics Letters
, 122
(15)
, Article 151601. 10.1063/5.0145772.
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Schofield, Steven;
Rahman, Talat;
Teplyakov, Andrew;
(2022)
Atomic and molecular functionalisation of technological materials: an introduction to Nanoscale Processes on Semiconductor Surfaces.
Journal of Physics: Condensed Matter
, 34
(21)
, Article 210401. 10.1088/1361-648X/ac5a24.
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Schofield, SR;
Curson, NJ;
Simmons, MY;
Ruess, FJ;
Hallam, T;
Oberbeck, L;
Clark, RG;
(2003)
Atomically precise placement of single dopants in Si.
PHYS REV LETT
, 91
(13)
, Article 136104. 10.1103/PhysRevLett.91.136104.
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Schofield, SR;
Rogge, S;
(2015)
Single dopants in semiconductors.
[Editorial comment].
Journal of Physics: Condensed Matter
, 27
(15)
, Article 150301. 10.1088/0953-8984/27/15/150301.
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Schofield, SR;
Studer, P;
Hirjibehedin, CF;
Curson, NJ;
Aeppli, G;
Bowler, DR;
(2013)
Quantum engineering at the silicon surface using dangling bonds.
Nat Commun
, 4
, Article 1649. 10.1038/ncomms2679.
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Sinthiptharakoon, K;
Schofield, SR;
Studer, P;
Brazdova, V;
Hirjibehedin, CF;
Bowler, DR;
Curson, NJ;
(2014)
Investigating individual arsenic dopant atoms in silicon using low-temperature scanning tunnelling microscopy.
JOURNAL OF PHYSICS-CONDENSED MATTER
, 26
(1)
, Article ARTN 012001. 10.1088/0953-8984/26/1/012001.
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Stock, Taylor JZ;
Warschkow, Oliver;
Constantinou, Procopios C;
Bowler, David R;
Schofield, Steven R;
Curson, Neil J;
(2024)
Single‐Atom Control of Arsenic Incorporation in Silicon for High‐Yield Artificial Lattice Fabrication.
Advanced Materials
, 36
(24)
, Article 2312282. 10.1002/adma.202312282.
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Stock, TJZ;
Warschkow, O;
Constantinou, PC;
Li, J;
Fearn, S;
Crane, E;
Hofmann, EVS;
... Curson, NJ; + view all
(2020)
Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy.
ACS Nano
, 14
(3)
pp. 3316-3327.
10.1021/acsnano.9b08943.
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Tseng, Li-Ting;
Karadan, Prajith;
Kazazis, Dimitrios;
Constantinou, Procopios C;
Stock, Taylor JZ;
Curson, Neil J;
Schofield, Steven R;
... Ekinci, Yasin; + view all
(2023)
Resistless EUV lithography: Photon-induced oxide patterning on silicon.
Science Advances
, 9
(16)
, Article eadf5997. 10.1126/sciadv.adf5997.
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Warschkow, O;
Curson, NJ;
Schofield, SR;
Marks, NA;
Wilson, HF;
Radny, MW;
Smith, PV;
... Simmons, MY; + view all
(2016)
Reaction paths of phosphine dissociation on silicon (001).
Journal of Chemical Physics
, 144
(1)
, Article 014705. 10.1063/1.4939124.
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Wentink, M;
Gaberle, J;
Aghajanian, M;
Mostofi, A;
Curson, N;
Lischner, J;
Schofield, S;
... Kenyon, A; + view all
(2021)
Substitutional tin acceptor states in black phosphorus.
The Journal of Physical Chemistry C: Energy Conversion and Storage, Optical and Electronic Devices, Interfaces, Nanomaterials, and Hard Matter
, 125
(41)
pp. 22883-22889.
10.1021/acs.jpcc.1c07115.
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Wilson, HF;
Warschkow, O;
Marks, NA;
Schofield, SR;
Curson, NJ;
Smith, PV;
Radny, MW;
... Simmons, MY; + view all
(2004)
Phosphine dissociation on the Si(001) surface.
PHYS REV LETT
, 93
(22)
, Article 226102. 10.1103/PhysRevLett.93.226102.
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Zhao, J;
Madachik, MR;
O'Donnell, KM;
Moore, G;
Thomsen, L;
Warschkow, O;
Schofield, SR;
(2016)
Adsorption and Dissociation of a Bicyclic Tertiary Diamine, Triethylenediamine, on a Si(100)-2 x 1 Surface.
The Journal of Physical Chemistry C
, 120
(50)
pp. 28672-28681.
10.1021/acs.jpcc.6b10485.
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Thesis
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Rahnejat, KA;
(2015)
Capturing complex reaction pathways step by step: organic molecules on the Si(001) surface.
Doctoral thesis , UCL (University College London).
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