Oberbeck, L;
Reusch, TCG;
Hallam, T;
Schofield, SR;
Curson, NJ;
Simmons, MY;
(2014)
Imaging of buried phosphorus nanostructures in silicon using scanning tunneling microscopy.
Applied Physics Letters
, 104
, Article 253102. 10.1063/1.4884654.
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Abstract
We demonstrate the locating and imaging of single phosphorus atoms and phosphorus dopant nanostructures, buried beneath the Si(001) surface using scanning tunneling microscopy. The buried dopant nanostructures have been fabricated in a bottom-up approach using scanning tunneling microscope lithography on Si(001). We find that current imaging tunneling spectroscopy is suited to locate and image buried nanostructures at room temperature and with residual surface roughness present. From these studies, we can place an upper limit on the lateral diffusion during encapsulation with low-temperature Si molecular beam epitaxy.
Type: | Article |
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Title: | Imaging of buried phosphorus nanostructures in silicon using scanning tunneling microscopy |
Open access status: | An open access version is available from UCL Discovery |
DOI: | 10.1063/1.4884654 |
Publisher version: | http://dx.doi.org/10.1063/1.4884654 |
Language: | English |
Additional information: | © 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. [http://dx.doi.org/10.1063/1.4884654] |
UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology |
URI: | https://discovery.ucl.ac.uk/id/eprint/1443127 |
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