Schofield, SR;
Curson, NJ;
Simmons, MY;
Ruess, FJ;
Hallam, T;
Oberbeck, L;
Clark, RG;
(2003)
Atomically precise placement of single dopants in Si.
PHYS REV LETT
, 91
(13)
, Article 136104. 10.1103/PhysRevLett.91.136104.
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Abstract
We demonstrate the controlled incorporation of P dopant atoms in Si(001), presenting a new path toward the creation of atomic-scale electronic devices. We present a detailed study of the interaction of PH3 with Si(001) and show that it is possible to thermally incorporate P atoms into Si(001) below the H-desorption temperature. Control over the precise spatial location at which P atoms are incorporated was achieved using STM H lithography. We demonstrate the positioning of single P atoms in Si with similar to1 nm accuracy and the creation of nanometer wide lines of incorporated P atoms.
| Type: | Article |
|---|---|
| Title: | Atomically precise placement of single dopants in Si |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1103/PhysRevLett.91.136104 |
| Publisher version: | http://dx.doi.org/10.1103/PhysRevLett.91.136104 |
| Language: | English |
| Additional information: | © 2003 The American Physical Society |
| Keywords: | SCANNING-TUNNELING-MICROSCOPY, QUANTUM COMPUTER, SI(001), SURFACE, SILICON, DESORPTION, SI(100)-(2X1), DISSOCIATION, RESOLUTION, ADSORPTION |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology |
| URI: | https://discovery.ucl.ac.uk/id/eprint/170063 |
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