Padovani, A;
La Torraca, P;
Strand, J;
Larcher, L;
Shluger, AL;
(2024)
Dielectric breakdown of oxide films in electronic devices.
Nature Reviews Materials
, 9
pp. 607-627.
10.1038/s41578-024-00702-0.
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Abstract
Dielectric breakdown is a sudden and catastrophic increase in the conductivity of an insulator caused by electrical stress. It is one of the major reliability issues in electronic devices using insulating films as gate insulators and in energy and memory capacitors. Despite extensive studies, our understanding of the physical mechanisms driving the breakdown process remains incomplete, and atomistic models describing the dielectric breakdown are controversial. This Review surveys the enormous amount of data and knowledge accumulated from experimental and theoretical studies of dielectric breakdown in different insulating materials, focusing on describing phenomenological models and novel computational approaches.
| Type: | Article |
|---|---|
| Title: | Dielectric breakdown of oxide films in electronic devices |
| DOI: | 10.1038/s41578-024-00702-0 |
| Publisher version: | http://dx.doi.org/10.1038/s41578-024-00702-0 |
| Language: | English |
| Additional information: | This version is the author accepted manuscript. For information on re-use, please refer to the publisher's terms and conditions. |
| Keywords: | Electrical and electronic engineering, Electronic devices |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > Dept of Physics and Astronomy |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10196865 |
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