Cowie, Megan; Stock, Taylor JZ; Constantinou, Procopios C; Curson, Neil J; Grütter, Peter; (2024) Spatially Resolved Dielectric Loss at the Si/SiO2 Interface. Physical Review Letters , 132 (25) , Article 256202. 10.1103/physrevlett.132.256202.

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Abstract

The Si=SiO2 interface is populated by isolated trap states that modify its electronic properties. These traps are of critical interest for the development of semiconductor-based quantum sensors and computers, as well as nanoelectronic devices. Here, we study the electric susceptibility of the Si=SiO2 interface with nm spatial resolution using frequency-modulated atomic force microscopy. The sample measured here is a patterned dopant delta layer buried 2 nm beneath the silicon native oxide interface. We show that charge organization timescales of the Si=SiO2 interface range from 1–150 ns, and increase significantly around interfacial traps. We conclude that under time-varying gate biases, dielectric loss in metal-insulatorsemiconductor capacitor devices is in the frequency range of MHz to sub-MHz, and is highly spatially heterogeneous over nm length scales.

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