Liu, Jianzhuo;
Tang, Mingchu;
Deng, Huiwen;
Shutts, Samuel;
Wang, Lingfang;
Smowton, Peter M;
Jin, Chaoyuan;
... Liu, Huiyun; + view all
(2022)
Theoretical analysis and modelling of degradation for III–V lasers on Si.
Journal of Physics D: Applied Physics
, 55
(40)
, Article 404006. 10.1088/1361-6463/ac83d3.
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Abstract
InAs/GaAs quantum-dot (QD) lasers offer a promising method to realise Si-based on-chip light sources. However, the monolithic integration of III–V materials on Si introduces a high density of threading dislocations (TDs), which limits the performance of such a laser device in terms of device lifetime. Here, we proposed a kinetic model including a degradation term and a saturation term to simulate the degradation process caused by the TDs in the early stage of laser operation. By using a rate equation model, the current density in the wetting layer, where the TDs concentrate, is calculated. We compared the rate of degradation of QD lasers with different cavity lengths and of quantum-well lasers, where both are directly grown on Si substrates, by varying the fitting parameters in the calculation of current densities in the kinetic model.
| Type: | Article |
|---|---|
| Title: | Theoretical analysis and modelling of degradation for III–V lasers on Si |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1088/1361-6463/ac83d3 |
| Publisher version: | https://doi.org/10.1088/1361-6463/ac83d3 |
| Language: | English |
| Additional information: | © 2022 IOP Publishing. Original content from this work may be used under the terms of the Creative Commons Attribution 4.0 license (http://creativecommons.org/licenses/by/4.0/). |
| UCL classification: | UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng UCL > Provost and Vice Provost Offices > UCL BEAMS UCL |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10153624 |
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