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Modelling of Ultrafast Waveguided Electro-Absorption Modulator at Telecommunication Wavelength (λ=1.55 μm) based on Intersubband Transition in an InGaAs/AlAs/AlAsSb Asymmetric Coupled Double Quantum Well Lattice-matched to InP

Matin, P; Matin, P; (2021) Modelling of Ultrafast Waveguided Electro-Absorption Modulator at Telecommunication Wavelength (λ=1.55 μm) based on Intersubband Transition in an InGaAs/AlAs/AlAsSb Asymmetric Coupled Double Quantum Well Lattice-matched to InP. IEEE Journal of Quantum Electronics 10.1109/JQE.2021.3087327. (In press). Green open access

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Abstract

We investigated theoretically a waveguided EAM (Electro-Absorption Modulator) based on ISBT (Intersubband Transitions) in an In(0.53)Ga(0.47)As/AIAs/AIAs(0.56)Sb(0.44) A-CDQWs (Asymmetric Coupled Double Quantum Wells) lattice-matched to InP at telecommunication wavelength (λ=1.55 μm) which offers ultrahigh-speed and moderate voltage swing. Likewise, the temperature dependency in the In(0.53)Ga(0.47)As/AIAs/AIAs(0.56)Sb(0.44) A-CDQWs was investigated at different temperatures from 300 K to 400 K and evidently the InP-based ISB (Intersubband) modulator offers better temperature stability (~ 0.05 nm/C) compared to the InP-based IB (Interband) modulator. The EAM investigated here is anticipated to have a RC-limited speed (f3dB) of. 300 GHz with insertion loss of 5.1 dB, 10 dB extinction ratio and 5.18 dB/V modulation efficiency at a peak-to-peak voltage of 2.0 V which can support a data rate of up to 600 Gbps and beyond.

Type: Article
Title: Modelling of Ultrafast Waveguided Electro-Absorption Modulator at Telecommunication Wavelength (λ=1.55 μm) based on Intersubband Transition in an InGaAs/AlAs/AlAsSb Asymmetric Coupled Double Quantum Well Lattice-matched to InP
Open access status: An open access version is available from UCL Discovery
DOI: 10.1109/JQE.2021.3087327
Publisher version: http://dx.doi.org/10.1109/JQE.2021.3087327
Language: English
Additional information: This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions.
Keywords: Absorption, Indium phosphide, III-V semiconductor materials, Ultrafast optics, Optical devices, Optical saturation, Thermal stability
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/10130048
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