Duan, J;
Fogarty, MA;
Williams, J;
Hutin, L;
Vinet, M;
Morton, JJL;
(2020)
Remote Capacitive Sensing in Two-Dimensional Quantum-Dot Arrays.
Nano Letters
, 20
(10)
pp. 7123-7128.
10.1021/acs.nanolett.0c02393.
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Abstract
We investigate gate-induced quantum dots in silicon nanowire field-effect transistors fabricated using a foundry-compatible fully depleted silicon-on-insulator (FD-SOI) process. A series of split gates wrapped over the silicon nanowire naturally produces a 2 × n bilinear array of quantum dots along a single nanowire. We begin by studying the capacitive coupling of quantum dots within such a 2 × 2 array and then show how such couplings can be extended across two parallel silicon nanowires coupled together by shared, electrically isolated, “floating” electrodes. With one quantum dot operating as a single-electron-box sensor, the floating gate serves to enhance the charge sensitivity range, enabling it to detect charge state transitions in a separate silicon nanowire. By comparing measurements from multiple devices, we illustrate the impact of the floating gate by quantifying both the charge sensitivity decay as a function of dot-sensor separation and configuration within the dual-nanowire structure.
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