Chan, S;
Kim, D;
Tang, M;
Li, X;
Liu, H;
(2019)
Investigation into the current loss in InAs/GaAs quantum dot solar cells with Si-doped quantum dots.
Journal of Physics D: Applied Physics
, 52
(50)
, Article 505108. 10.1088/1361-6463/ab4147.
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Abstract
Our previous studies have shown that introducing Si doping in quantum dots (QDs) can help QD solar cells achieve higher voltage. However, this improvement came at the cost of current loss. In this work, we continue to investigate the cause of the current loss and propose a method to recover it without compromising the voltage. Photoluminescence measurements have confirmed that optimizing the thickness of the GaAs layers in the i-region can lead to strong current gain (~14%) with minimal voltage loss (<3%) and alteration of the QD quality. The capacitance–voltage measurement results support that the current gain mainly originates from the increased depletion width.
| Type: | Article |
|---|---|
| Title: | Investigation into the current loss in InAs/GaAs quantum dot solar cells with Si-doped quantum dots |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1088/1361-6463/ab4147 |
| Publisher version: | https://doi.org/10.1088/1361-6463/ab4147 |
| Language: | English |
| Additional information: | © 2019 IOP Publishing Ltd. Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence (http://creativecommons.org/licenses/by/3.0). |
| Keywords: | MBE, QDSC, current recovery |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10083803 |
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