Odedeyi, TO;
Darwazeh, I;
(2018)
Bandwidth Enhancement Technique for Bipolar Single Stage Distributed Amplifier Design.
In: Pasya,, Idnin and Seman, Fauziahanim Che, (eds.)
Proceedings of the 2017 IEEE Asia Pacific Microwave Conference (APMC).
IEEE: Kuala Lumpur, Singapore.
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Abstract
This work reports a novel approach to extending the bandwidth of single stage distributed amplifiers (SSDAs). The three-stepped technique involves scaling down the inductance on the input artificial transmission line (ATL); creating a high frequency resonance peak by the addition of shunt capacitance on the input ATL; and compensating for the resulting increased reflection with adapted negative resistance attenuation compensation techniques. Compared with the inductive-peaked cascode technique applied in the SSDA which currently has the highest reported bandwidth, simulation results, based on full foundry transistor models, predict up to 30% improvement in gain-bandwidth (GBW) performance for the same active device at the same bias. In addition, the reduction in the length of the input ATL effectively reduces transmission line losses, thereby improving the overall gain performance.
| Type: | Proceedings paper |
|---|---|
| Title: | Bandwidth Enhancement Technique for Bipolar Single Stage Distributed Amplifier Design |
| Event: | 2017 IEEE Asia Pacific Microwave Conference (APMC) |
| Location: | Kuala Lumpur, Malaysia |
| Dates: | 13 November 2017 - 16 November 2017 |
| ISBN-13: | 978-1-5386-0640-7 |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1109/APMC.2017.8251578 |
| Publisher version: | http://doi.org/10.1109/APMC.2017.8251578 |
| Language: | English |
| Additional information: | This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions. |
| Keywords: | Single stage distributed amplifier (SSDA), transmission line scaling, attenuation compensation, Indium Phosphide (InP), double heterojunction bipolar transistor (DHBT), inductive peaking |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Computer Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10042845 |
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