TORRES, VJB;
MASRI, PM;
STONEHAM, AM;
(1987)
2-LEVEL SYSTEMS - A POSSIBLE STRUCTURE AND ITS ROLE IN AMORPHIZATION.
J PHYS C SOLID STATE
, 20
(10)
L143 - L146.
10.1088/0022-3719/20/10/001.
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Abstract
The authors show that a particular interstitial structure in c-Si has both ring structures characteristic of a-Si and low-energy excitations of a tunneling type and a bond-switch (soliton) type. These excitations exist for reasons of symmetry not because of anomalous bond angles or lengths. They suggest these defects may act as nuclei for amorphisation under irradiation and offer a possible explanation of the observed relation between tunneling level systems and the extent of amorphisation in quartz.
| Type: | Article |
|---|---|
| Title: | 2-LEVEL SYSTEMS - A POSSIBLE STRUCTURE AND ITS ROLE IN AMORPHIZATION |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1088/0022-3719/20/10/001 |
| Publisher version: | http://dx.doi.org/10.1088/0022-3719/20/10/001 |
| Language: | English |
| Additional information: | Text made available to UCL Discovery by kind permission of IOP Publishing, 2012 |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences |
| URI: | https://discovery.ucl.ac.uk/id/eprint/59659 |
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