Howard, DP; Marchand, P; Carmalt, CJ; Parkin, IP; Darr, JA; (2017) Si-doped zinc oxide transparent conducting oxides; Nanoparticle optimisation, scale-up and thin film deposition. Journal of Materials Chemistry C , 5 (34) pp. 8796-8801. 10.1039/c7tc02175e.

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Abstract

Silicon-doped zinc oxide, Zn 1-x Si x O y , transparent conducting oxide nanoparticles were prepared using a laboratory scale (production rate of 60 g h -1 ) continuous hydrothermal flow synthesis (CHFS) process in the dopant range 0.25 to 3.0 at% Si. The resistivity of the materials was assessed as pressed heat-treated pellets, revealing that the sample with the lowest resistivity (3.5 × 10 -2 Ω cm) was the 0.25 at% Si doped ZnO sample. The synthesis of this optimum composition was then scaled up to 350 g h -1 using a larger pilot plant CHFS process. Spin coating of a slurry of the resulting nanopowder made on the pilot plant, followed by an appropriate heat-treatment, produced a thin film with an optical transmission > 80% and a low resistivity of 2.4 × 10 -3 Ω cm, with a carrier concentration of 1.02 × 10 20 cm -3 and a mobility of 11 cm 2 V -1 s -1 . This is a factor of almost twenty times improvement in the resistivity versus the analogous pressed, heat-treated pellet.

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