Liao, M;
Chen, S;
Tang, M;
Wu, J;
Li, W;
Kennedy, K;
Ross, I;
... Liu, H; + view all
(2017)
Integrating III-V quantum dot lasers on silicon substrates for silicon photonics.
In: Reed, GT and Knights, AP, (eds.)
Silicon Photonics XII.
(pp. 101081A1-101081A8).
Society of Photo-Optical Instrumentation Engineers (SPIE)
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Abstract
The realization of efficient III-V lasers directly grown on Si substrates is highly desirable for large-scale and low-cost silicon based optoelectronic integrated circuits. However, it has been hindered by the high threading dislocation (TD) density generated at the interface between III-V compounds and Si substrates. Introducing dislocation filter layers (DFLs) to suppress the TD propagation into the active region becomes a key factor for realising lasers with advanced performance. In this paper, optimization of InGaAs/GaAs DFLs in III-V quantum dot (QD) lasers on Si is demonstrated. Based on these optimized DFLs and other strategies, we have achieved a high performance electrically pumped QD laser on a Si substrate with threshold current density of 62.5 A cm-2, over 105 mW output power, maximum operation temperature of 120 °C and over 100,158 h of extrapolated lifetime.
Type: | Proceedings paper |
---|---|
Title: | Integrating III-V quantum dot lasers on silicon substrates for silicon photonics |
Event: | SPIE Photonics West - OPTO 2017 |
Location: | San Francisco, California, United States |
Dates: | 28 January 2017 - 02 February 2017 |
ISBN-13: | 9781510606586 |
Open access status: | An open access version is available from UCL Discovery |
DOI: | 10.1117/12.2249761 |
Publisher version: | http://doi.org/10.1117/12.2249761 |
Language: | English |
Additional information: | © (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). This version is the version of record. For information on re-use, please refer to the publisher’s terms and conditions. |
Keywords: | Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Optics, Physics, Applied, Engineering, Physics, Molecular beam epitaxy, quantum dots, lasers, silicon photonics |
UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
URI: | https://discovery.ucl.ac.uk/id/eprint/1571456 |




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