Smith, R;
Bowler, DR;
(2017)
Alane adsorption and dissociation on the Si(001) surface.
Journal of Physics: Condensed Matter
, 29
(39)
, Article 395001. 10.1088/1361-648X/aa7e48.
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Abstract
We used DFT to study the energetics of the decomposition of alane, AlH3, on the Si(001) surface, as the acceptor complement to PH3. Alane forms a dative bond with the raised atoms of silicon surface dimers, via the Si atom lone pair. We calculated the energies of various structures along the pathway of successive dehydrogenation events following adsorption: AlH2, AlH and Al, finding a gradual, significant decrease in energy. For each stage, we analyse the structure and bonding, and present simulated STM images of the lowest energy structures. Finally, we find that the energy of Al atoms incorporated into the surface, ejecting a Si atom, is comparable to Al adatoms. These findings show that Al incorporation is likely to be as precisely controlled as P incorporation, if slightly less easy to achieve.
Type: | Article |
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Title: | Alane adsorption and dissociation on the Si(001) surface |
Open access status: | An open access version is available from UCL Discovery |
DOI: | 10.1088/1361-648X/aa7e48 |
Publisher version: | http://doi.org/10.1088/1361-648X/aa7e48 |
Language: | English |
Additional information: | This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions. |
UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > Dept of Physics and Astronomy |
URI: | https://discovery.ucl.ac.uk/id/eprint/1566627 |
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