Jurczak, P;
Zhang, Y;
Wu, J;
Sanchez, AM;
Aagesen, M;
Liu, H;
(2017)
Ten-Fold Enhancement of InAs Nanowire Photoluminescence Emission with an InP Passivation Layer.
Nano Letters
, 17
(6)
pp. 3629-3633.
10.1021/acs.nanolett.7b00803.
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Abstract
In this Letter, we demonstrate that a significant improvement of optical performance of InAs nanowires can be achieved by capping the core InAs nanowires with a thin InP shell, which successfully passivates the surface states reducing the rate of nonradiative recombination. The improvements have been confirmed by detailed photoluminescence measurements, which showed up to a 10-fold increase in the intensity of room-temperature photoluminescence from the capped InAs/InP nanowires compared to the sample with core-only InAs nanowires. Moreover, the nanowires exhibit a high stability of total photoluminescence emission strength across temperature range from 10 to 300 K as a result of strong quantum confinement. These findings could be the key to successful implementation of InAs nanowires into optoelectronic devices.
| Type: | Article |
|---|---|
| Title: | Ten-Fold Enhancement of InAs Nanowire Photoluminescence Emission with an InP Passivation Layer |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1021/acs.nanolett.7b00803 |
| Publisher version: | http://doi.org/10.1021/acs.nanolett.7b00803 |
| Language: | English |
| Additional information: | This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions. |
| Keywords: | Science & Technology, Physical Sciences, Technology, Chemistry, Multidisciplinary, Chemistry, Physical, Nanoscience & Nanotechnology, Materials Science, Multidisciplinary, Physics, Applied, Physics, Condensed Matter, Chemistry, Science & Technology - Other Topics, Materials Science, Physics, Nanowires, InAs, self-catalyzed, photoluminescence, III-V NANOWIRES, QUANTUM DOTS, ELECTRON-MOBILITY, BUILDING-BLOCKS, SOLAR-CELLS, SILICON, DEVICES, TRANSISTORS, TRANSPORT, SEMICONDUCTOR |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/1566371 |
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