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Influence of Si doping on InAs/GaAs quantum dot solar cells with AlAs cap layers

Kim, D; Tang, M; Wu, J; Hatch, S; Maidaniuk, Y; Dorogan, V; Mazur, YI; ... Liu, H; + view all (2017) Influence of Si doping on InAs/GaAs quantum dot solar cells with AlAs cap layers. In: Freundlich, A and Lombez, L and Sugiyama, M, (eds.) Photons Plus Ultrasound: Imaging and Sensing 2017. (pp. 100990H-1-100990H-6). Society of Photo-Optical Instrumentation Engineers (SPIE): San Francisco, California, United States. Green open access

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Abstract

A novel all-optical forward-viewing photoacoustic probe using a flexible coherent fibre-optic bundle and a Fabry- Perot (FP) ultrasound sensor has been developed. The fibre bundle, along with the FP sensor at its distal end, synthesizes a high density 2D array of wideband ultrasound detectors. Photoacoustic waves arriving at the sensor are spatially mapped by optically scanning the proximal end face of the bundle in 2D with a CW wavelength-tunable interrogation laser. 3D images are formed from the detected signals using a time-reversal image reconstruction algorithm. The system has been characterized in terms of its PSF, noise-equivalent pressure and field of view. Finally, the high resolution 3D imaging capability has been demonstrated using arbitrary shaped phantoms and duck embryo.

Type: Proceedings paper
Title: Influence of Si doping on InAs/GaAs quantum dot solar cells with AlAs cap layers
Event: Conference on Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VI
Location: San Francisco, CA
Dates: 30 January 2017 - 01 February 2017
Open access status: An open access version is available from UCL Discovery
DOI: 10.1117/12.2250328
Publisher version: http://dx.doi.org/10.1117/12.2250328
Language: English
Additional information: This version is the version of record. For information on re-use, please refer to the publisher’s terms and conditions.
Keywords: Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Optics, Physics, Applied, Engineering, Physics, Quantum dot solar cells, intermediate band solar cells, molecular beam epitaxy, INTERMEDIATE-BAND, GROWTH-TEMPERATURE, DETAILED BALANCE, SPACER LAYER, EFFICIENCY, GAAS
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/1559640
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