Kim, D;
Tang, M;
Wu, J;
Hatch, S;
Maidaniuk, Y;
Dorogan, V;
Mazur, YI;
... Liu, H; + view all
(2017)
Influence of Si doping on InAs/GaAs quantum dot solar cells with AlAs cap layers.
In: Freundlich, A and Lombez, L and Sugiyama, M, (eds.)
Photons Plus Ultrasound: Imaging and Sensing 2017.
(pp. 100990H-1-100990H-6).
Society of Photo-Optical Instrumentation Engineers (SPIE): San Francisco, California, United States.
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Abstract
A novel all-optical forward-viewing photoacoustic probe using a flexible coherent fibre-optic bundle and a Fabry- Perot (FP) ultrasound sensor has been developed. The fibre bundle, along with the FP sensor at its distal end, synthesizes a high density 2D array of wideband ultrasound detectors. Photoacoustic waves arriving at the sensor are spatially mapped by optically scanning the proximal end face of the bundle in 2D with a CW wavelength-tunable interrogation laser. 3D images are formed from the detected signals using a time-reversal image reconstruction algorithm. The system has been characterized in terms of its PSF, noise-equivalent pressure and field of view. Finally, the high resolution 3D imaging capability has been demonstrated using arbitrary shaped phantoms and duck embryo.
| Type: | Proceedings paper |
|---|---|
| Title: | Influence of Si doping on InAs/GaAs quantum dot solar cells with AlAs cap layers |
| Event: | Conference on Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VI |
| Location: | San Francisco, CA |
| Dates: | 30 January 2017 - 01 February 2017 |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1117/12.2250328 |
| Publisher version: | http://dx.doi.org/10.1117/12.2250328 |
| Language: | English |
| Additional information: | This version is the version of record. For information on re-use, please refer to the publisher’s terms and conditions. |
| Keywords: | Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Optics, Physics, Applied, Engineering, Physics, Quantum dot solar cells, intermediate band solar cells, molecular beam epitaxy, INTERMEDIATE-BAND, GROWTH-TEMPERATURE, DETAILED BALANCE, SPACER LAYER, EFFICIENCY, GAAS |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/1559640 |
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