Murata, K;
Kirkham, C;
Shimomura, M;
Nitta, K;
Uruga, T;
Terada, Y;
Nittoh, K-I;
... Miki, K; + view all
(2017)
Dopant activation mechanism of Bi wire- δ -doping into Si crystal, investigated with wavelength dispersive fluorescence x-ray absorption fine structure and density functional theory.
Journal of Physics: Condensed Matter
, 29
(15)
, Article 155001. 10.1088/1361-648X/aa6180.
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Abstract
We successfully characterized the local structures of Bi atoms in a wire-δ-doped layer (1/8 ML) in a Si crystal, using wavelength dispersive fluorescence x-ray absorption fine structure at the beamline BL37XU, in SPring-8, with the help of density functional theory calculations. It was found that the burial of Bi nanolines on the Si(0 0 1) surface, via growth of Si capping layer at 400 °C by molecular beam epitaxy, reduced the Bi-Si bond length from to Å. We infer that following epitaxial growth the Bi-Bi dimers of the nanoline are broken, and the Bi atoms are located at substitutional sites within the Si crystal, leading to the shorter Bi-Si bond lengths.
Type: | Article |
---|---|
Title: | Dopant activation mechanism of Bi wire- δ -doping into Si crystal, investigated with wavelength dispersive fluorescence x-ray absorption fine structure and density functional theory |
Open access status: | An open access version is available from UCL Discovery |
DOI: | 10.1088/1361-648X/aa6180 |
Publisher version: | https://doi.org/10.1088/1361-648X/aa6180 |
Language: | English |
Additional information: | This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions. |
Keywords: | Silicon, doping, XAFS, epitaxy |
UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > Dept of Physics and Astronomy |
URI: | https://discovery.ucl.ac.uk/id/eprint/1548970 |
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