Morley, GW;
McCamey, DR;
Seipel, HA;
Brunel, LC;
van Tol, J;
Boehme, C;
(2008)
Long-Lived Spin Coherence in Silicon with an Electrical Spin Trap Readout.
PHYS REV LETT
, 101
(20)
, Article 207602. 10.1103/PhysRevLett.101.207602.
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Abstract
Pulsed electrically detected magnetic resonance of phosphorous (P-31) in bulk crystalline silicon at very high magnetic fields (B-0 > 8.5 T) and low temperatures (T=2.8 K) is presented. We find that the spin-dependent capture and reemission of highly polarized (> 95%) conduction electrons by equally highly polarized P-31 donor electrons introduces less decoherence than other mechanisms for spin-to-charge conversion. This allows the electrical detection of spin coherence times in excess of 100 mu s, 50 times longer than the previous maximum for electrically detected spin readout experiments.
| Type: | Article |
|---|---|
| Title: | Long-Lived Spin Coherence in Silicon with an Electrical Spin Trap Readout |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1103/PhysRevLett.101.207602 |
| Publisher version: | http://dx.doi.org/10.1103/PhysRevLett.101.207602 |
| Language: | English |
| Additional information: | © 2008 The American Physical Society |
| Keywords: | SINGLE-ELECTRON, QUANTUM, SEMICONDUCTORS, DONORS, STATES |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences |
| URI: | https://discovery.ucl.ac.uk/id/eprint/150173 |
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