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Monolithically Integrated InAs/GaAs Quantum Dot Mid-Infrared Photodetectors on Silicon Substrates

Wu, J; Jiang, Q; Chen, S; Tang, M; Mazur, YI; Maidaniuk, Y; Benamara, M; ... Liu, H; + view all (2016) Monolithically Integrated InAs/GaAs Quantum Dot Mid-Infrared Photodetectors on Silicon Substrates. ACS Photonics , 3 (5) pp. 749-753. 10.1021/acsphotonics.6b00076. Green open access

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Abstract

High-performance, multispectral, and large-format infrared focal plane arrays are the long-demanded third-generation infrared technique for hyperspectral imaging, infrared spectroscopy, and target identification. A promising solution is to monolithically integrate infrared photodetectors on a silicon platform, which offers not only low-cost but high-resolution focal plane arrays by taking advantage of the well-established Si-based readout integrated circuits. Here, we report the first InAs/GaAs quantum dot (QD) infrared photodetectors monolithically integrated on silicon substrates by molecular beam epitaxy. The III–V photodetectors are directly grown on silicon substrates by using a GaAs buffer, which reduces the threading dislocation density to ∼106 cm–2. The high-quality QDs grown on Si substrates have led to long photocarrier relaxation time and low dark current density. Mid-infrared photodetection up to ∼8 μm is also achieved at 80 K. This work demonstrates that III–V photodetectors can directly be integrated with silicon readout circuitry for realizing large-format focal plane arrays as well as mid-infrared photonics in silicon.

Type: Article
Title: Monolithically Integrated InAs/GaAs Quantum Dot Mid-Infrared Photodetectors on Silicon Substrates
Open access status: An open access version is available from UCL Discovery
DOI: 10.1021/acsphotonics.6b00076
Publisher version: http://dx.doi.org/10.1021/acsphotonics.6b00076
Language: English
Additional information: Copyright © 2016 American Chemical Society. This is an open access article published under a Creative Commons Attribution (CC-BY) License (http://pubs.acs.org/page/policy/authorchoice_ccby_termsofuse.html), which permits unrestricted use, distribution and reproduction in any medium, provided the author and source are cited.
Keywords: infrared photodetectors; molecular beam epitaxy; quantum dots; silicon
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/1495788
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