Wu, J;
Jiang, Q;
Chen, S;
Tang, M;
Mazur, YI;
Maidaniuk, Y;
Benamara, M;
... Liu, H; + view all
(2016)
Monolithically Integrated InAs/GaAs Quantum Dot Mid-Infrared Photodetectors on Silicon Substrates.
ACS Photonics
, 3
(5)
pp. 749-753.
10.1021/acsphotonics.6b00076.
Preview |
Text
Wu_Monolithically Integrated InAs-GaAs Quantum Dot Mid-Infrared Photodetectors on Silicon Substrates.pdf Download (540kB) | Preview |
Abstract
High-performance, multispectral, and large-format infrared focal plane arrays are the long-demanded third-generation infrared technique for hyperspectral imaging, infrared spectroscopy, and target identification. A promising solution is to monolithically integrate infrared photodetectors on a silicon platform, which offers not only low-cost but high-resolution focal plane arrays by taking advantage of the well-established Si-based readout integrated circuits. Here, we report the first InAs/GaAs quantum dot (QD) infrared photodetectors monolithically integrated on silicon substrates by molecular beam epitaxy. The III–V photodetectors are directly grown on silicon substrates by using a GaAs buffer, which reduces the threading dislocation density to ∼106 cm–2. The high-quality QDs grown on Si substrates have led to long photocarrier relaxation time and low dark current density. Mid-infrared photodetection up to ∼8 μm is also achieved at 80 K. This work demonstrates that III–V photodetectors can directly be integrated with silicon readout circuitry for realizing large-format focal plane arrays as well as mid-infrared photonics in silicon.
| Type: | Article |
|---|---|
| Title: | Monolithically Integrated InAs/GaAs Quantum Dot Mid-Infrared Photodetectors on Silicon Substrates |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1021/acsphotonics.6b00076 |
| Publisher version: | http://dx.doi.org/10.1021/acsphotonics.6b00076 |
| Language: | English |
| Additional information: | Copyright © 2016 American Chemical Society. This is an open access article published under a Creative Commons Attribution (CC-BY) License (http://pubs.acs.org/page/policy/authorchoice_ccby_termsofuse.html), which permits unrestricted use, distribution and reproduction in any medium, provided the author and source are cited. |
| Keywords: | infrared photodetectors; molecular beam epitaxy; quantum dots; silicon |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/1495788 |
Loading...
Loading...Loading...| 1. |  China | 6 |
| 2. |  United States | 5 |
| 3. |  Russian Federation | 2 |
| 4. |  United Kingdom | 2 |
| 5. |  Japan | 1 |
Archive Staff Only
 |
View Item |
