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Electrically pumped continuous-wave III–V quantum dot lasers on silicon

Chen, S; Li, W; Wu, J; Jiang, Q; Tang, M; Shutts, S; Elliott, SN; ... Liu, H; + view all (2016) Electrically pumped continuous-wave III–V quantum dot lasers on silicon. Nature Photonics , 10 pp. 307-311. 10.1038/nphoton.2016.21. Green open access

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Abstract

Reliable, efficient electrically pumped silicon-based lasers would enable full integration of photonic and electronic circuits, but have previously only been realized by wafer bonding. Here, we demonstrate continuous-wave InAs/GaAs quantum dot lasers directly grown on silicon substrates with a low threshold current density of 62.5 A cm2, a room-temperature output power exceeding 105 mW and operation up to 120 °C. Over 3,100 h of continuous-wave operating data have been collected, giving an extrapolated mean time to failure of over 100,158 h. The realization of high-performance quantum dot lasers on silicon is due to the achievement of a low density of threading dislocations on the order of 105 cm-2 in the III–V epilayers by combining a nucleation layer and dislocation filter layers with in situ thermal annealing. These results are a major advance towards reliable and cost-effective silicon-based photonic–electronic integration.

Type: Article
Title: Electrically pumped continuous-wave III–V quantum dot lasers on silicon
Open access status: An open access version is available from UCL Discovery
DOI: 10.1038/nphoton.2016.21
Publisher version: http://dx.doi.org/10.1038/nphoton.2016.21
Language: English
Additional information: Copyright © 2016 Nature Publishing Group. All rights reserved.
Keywords: Quantum dots, Semiconductor lasers
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/1477048
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