Chen, S;
Li, W;
Wu, J;
Jiang, Q;
Tang, M;
Shutts, S;
Elliott, SN;
... Liu, H; + view all
(2016)
Electrically pumped continuous-wave III–V quantum dot lasers on silicon.
Nature Photonics
, 10
pp. 307-311.
10.1038/nphoton.2016.21.
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Abstract
Reliable, efficient electrically pumped silicon-based lasers would enable full integration of photonic and electronic circuits, but have previously only been realized by wafer bonding. Here, we demonstrate continuous-wave InAs/GaAs quantum dot lasers directly grown on silicon substrates with a low threshold current density of 62.5 A cm2, a room-temperature output power exceeding 105 mW and operation up to 120 °C. Over 3,100 h of continuous-wave operating data have been collected, giving an extrapolated mean time to failure of over 100,158 h. The realization of high-performance quantum dot lasers on silicon is due to the achievement of a low density of threading dislocations on the order of 105 cm-2 in the III–V epilayers by combining a nucleation layer and dislocation filter layers with in situ thermal annealing. These results are a major advance towards reliable and cost-effective silicon-based photonic–electronic integration.
| Type: | Article |
|---|---|
| Title: | Electrically pumped continuous-wave III–V quantum dot lasers on silicon |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1038/nphoton.2016.21 |
| Publisher version: | http://dx.doi.org/10.1038/nphoton.2016.21 |
| Language: | English |
| Additional information: | Copyright © 2016 Nature Publishing Group. All rights reserved. |
| Keywords: | Quantum dots, Semiconductor lasers |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/1477048 |
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