El-Sayed, A-M;
Watkins, MB;
Grasser, T;
Afanas’ev, VV;
Shluger, AL;
(2015)
Hole trapping at hydrogenic defects in amorphous silicon dioxide.
Microelectronic Engineering
, 147
141 - 144.
10.1016/j.mee.2015.04.073.
![]() Preview |
PDF
infos_sio2_h_charged.pdf Available under License : See the attached licence file. Download (1MB) |
Abstract
We used ab initio calculations to investigate the hole trapping reactions at a neutral defect generated in amorphous silicon dioxide networks by the interaction of strained Si–O bonds with atomic hydrogen, a so-called hydroxyl E′ center. It was found that the hole trapping at this defect leads to two distinct charged configurations. The first one consists of an H atom bound to a bridging O in a hydronium-like configuration. The second configuration involves relaxation of a Si atom through the plane of its oxygen neighbors facilitated by a weak interaction with a 2-coordinated O atom. The distribution of total energy differences between these two configurations calculated for a number of amorphous network models has a width of about 1.0 eV. These hole trapping reactions are discussed in the context of Si complementary metal-oxide-semiconductor device reliability issues.
Type: | Article |
---|---|
Title: | Hole trapping at hydrogenic defects in amorphous silicon dioxide |
Open access status: | An open access version is available from UCL Discovery |
DOI: | 10.1016/j.mee.2015.04.073 |
Publisher version: | http://dx.doi.org/10.1016/j.mee.2015.04.073 |
Language: | English |
Additional information: | NOTICE: this is the author’s version of a work that was accepted for publication in Microelectronic Engineering. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Microelectronic Engineering, 147, 11/2015 |
UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > Dept of Physics and Astronomy |
URI: | https://discovery.ucl.ac.uk/id/eprint/1468830 |




Archive Staff Only
![]() |
View Item |