Lam, P;
(2014)
The Effect of Rapid Thermal Annealing on InAs/GaAs Quantum Dot Solar Cells.
IET Optoelectronics
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Abstract
The effect of post-growth annealing on InAs/GaAs quantum dot solar cells (QDSCs) has been studied. A significant improvement in photoemission, photocurrent density, and spectral response has been observed with post-growth annealing. The optimal anneal temperature was found to be 700°C, which lead to an 18% improvement in current density from 4.9 mA cm-2 for as-grown sample to 5.8 mA cm-2. We assign this enhanced performance to the reduced density of inherent point defects that was formed at the quantum dot (QD) and GaAs barrier. Post-growth thermal anneal treatment of QDSCs is demonstrated as a simple route for achieving improved device performance.
| Type: | Article |
|---|---|
| Title: | The Effect of Rapid Thermal Annealing on InAs/GaAs Quantum Dot Solar Cells |
| Event: | IET |
| Open access status: | An open access version is available from UCL Discovery |
| Language: | English |
| Additional information: | This paper is a preprint of a paper accepted by IET Optoelectronics and is subject to Institution of Engineering and Technology Copyright. When the final version is published, the copy of record will be available at IET Digital Library |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/1458039 |
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