Zhang, Y;
Wu, J;
Aagesen, M;
Holm, J;
Hatch, S;
Tang, M;
Huo, S;
(2014)
Self-Catalyzed Ternary Core-Shell GaAsP Nanowire Arrays Grown on Patterned Si Substrates by Molecular Beam Epitaxy.
NANO LETTERS
, 14
(8)
4542 - 4547.
10.1021/nl501565b.
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Abstract
The growth of self-catalyzed ternary core–shell GaAsP nanowire (NW) arrays on SiO2 patterned Si(111) substrates has been demonstrated by using solid-source molecular beam epitaxy. A high-temperature deoxidization step up to ∼900 °C prior to NW growth was used to remove the native oxide and/or SiO2 residue from the patterned holes. To initiate the growth of GaAsP NW arrays, the Ga predeposition used for assisting the formation of Ga droplets in the patterned holes, was shown to be another essential step. The effects of the patterned-hole size on the NW morphology were also studied and explained using a simple growth model. A lattice-matched radial GaAsP core–shell NW structure has subsequently been developed with room-temperature photoluminescence emission around 740 nm. These results open up new perspectives for integrating position-controlled III–V NW photonic and electronic structures on a Si platform.
| Type: | Article |
|---|---|
| Title: | Self-Catalyzed Ternary Core-Shell GaAsP Nanowire Arrays Grown on Patterned Si Substrates by Molecular Beam Epitaxy |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1021/nl501565b |
| Publisher version: | http://dx.doi.org/10.1021/nl501565b |
| Additional information: | © 2014 American Chemical Society. This ACS article is provided to You under the terms of this ACS AuthorChoice/Editors’ Choice via Creative Commons CC-BY agreement between You and the American Chemical Society (“ACS”), a federally-chartered nonprofit located at 1155 16th Street NW, Washington DC 20036. Your access and use of this ACS article means that you have accepted and agreed to the Terms and Conditions of this Agreement. |
| Keywords: | Nanowire array, patterned growth, self-catalyzed, GaAsP, III-V on Si, high-temperature deoxidization, molecular beam epitaxy |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/1448768 |
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