Miranda, E;
Mehonic, A;
Sune, J;
Kenyon, AJ;
(2013)
Multi-channel conduction in redox-based resistive switch modelled using quantum point contact theory.
Applied Physics Letters
, 103
(22)
, Article 222904. 10.1063/1.4836935.
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Abstract
A simple analytic model for the electron transport through filamentary-type structures in Si-rich silica (SiOx)-based resistive switches is proposed. The model is based on a mesoscopic description and is able to account for the linear and nonlinear components of conductance that arise from both fully and partially formed conductive channels spanning the dielectric film. Channels are represented by arrays of identical scatterers whose number and quantum transmission properties determine the current magnitude in the low and high resistance states. We show that the proposed model not only reproduces the experimental current-voltage (I-V) characteristics but also the normalized differential conductance (dln(I)/dln(V)-V) curves of devices under test.
| Type: | Article |
|---|---|
| Title: | Multi-channel conduction in redox-based resistive switch modelled using quantum point contact theory |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1063/1.4836935 |
| Publisher version: | http://dx.doi.org/10.1063/1.4836935 |
| Language: | English |
| Additional information: | Copyright © 2013 AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 103, 222904 (2013); and may be found at http://dx.doi.org/10.1063/1.4836935 |
| UCL classification: | UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/1414335 |
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