Stoneham, AM;
(2002)
Dislocation-induced birefringence in CaF2 for lithography optics.
SEMICOND SCI TECH
, 17
(5)
L15 - L16.
10.1088/0268-1242/17/5/101.
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Abstract
Internal strain fields due to dislocations will cause birefringence in crystals such as CaF2. This birefringence will exceed levels considered acceptable for 157 nm lithography unless essentially all dislocations can be eliminated.
| Type: | Article |
|---|---|
| Title: | Dislocation-induced birefringence in CaF2 for lithography optics |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1088/0268-1242/17/5/101 |
| Publisher version: | http://dx.doi.org/10.1088/0268-1242/17/5/101 |
| Language: | English |
| Additional information: | Text made available to UCL Discovery by kind permission of IOP Publishing, 2012 |
| Keywords: | SCATTERING LOSSES, LIGHT-SCATTERING, FIBER MATERIALS, RESONANCE, CRYSTALS, SHAPES, LINES |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences |
| URI: | https://discovery.ucl.ac.uk/id/eprint/129089 |
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