Foster, AS;
Gal, AY;
Gale, JD;
Lee, YJ;
Nieminen, RM;
Shluger, AL;
(2004)
Interaction of silicon dangling bonds with insulating surfaces.
PHYS REV LETT
, 92
(3)
, Article 036101. 10.1103/PhysRevLett.92.036101.
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Abstract
We use first principles density functional theory calculations to study the interaction of a model dangling bond silicon tip with the surfaces of CaF2, Al2O3, TiO2, and MgO. In each case the strongest interaction is with the highest anions in the surface. We show that this is due to the onset of chemical bonding with the surface anions, which can be controlled by an electric field across the system. Combining our results and previous studies on semiconductor surfaces suggests that using dangling bond Si tips can provide immediate identification of surface species in atomically resolved noncontact atomic force microscopy and facilitate selective measurements of short-range interactions with surface sites.
| Type: | Article |
|---|---|
| Title: | Interaction of silicon dangling bonds with insulating surfaces |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1103/PhysRevLett.92.036101 |
| Publisher version: | http://dx.doi.org/10.1103/PhysRevLett.92.036101 |
| Language: | English |
| Additional information: | The American Physical Society |
| Keywords: | SCANNING FORCE MICROSCOPY, ELECTRONIC-STRUCTURE, OPTICAL-PROPERTIES, TIP, SPECTROSCOPY, ULTRAVIOLET |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > Dept of Physics and Astronomy |
| URI: | https://discovery.ucl.ac.uk/id/eprint/128928 |
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