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Vortex Beam Lasing from III-V Nanowires Epitaxially Grown on Silicon-on-Insulator

Ratiu, Bogdan-Petrin; Wang, Ji Tong; Netherwood, Kyle; Grieb, Tim; Rosenauer, Andreas; Oh, Sang Soon; Panoiu, Nicolae-Coriolan; (2025) Vortex Beam Lasing from III-V Nanowires Epitaxially Grown on Silicon-on-Insulator. Laser & Photonics Reviews , Article e01297. 10.1002/lpor.202501297. Green open access

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Abstract

Photonic crystal lasers can be used to achieve high emission powers with exceptional beam quality. Vortex beams carrying orbital angular momentum have found applications in areas such as free space communication, optical trapping, and microscopy. In this paper, the growth and operation of an epitaxially grown InGaAs nanowire photonic crystal laser on silicon on insulator, emitting a vortex beam, are investigated. The device is composed of a honeycomb array of nanowires, with compressed and expanded configurations to make use of the band inversion phenomenon. The resulting bound-state-in-the-continuum modes are characterized using simulations and confirmed by measurement.

Type: Article
Title: Vortex Beam Lasing from III-V Nanowires Epitaxially Grown on Silicon-on-Insulator
Open access status: An open access version is available from UCL Discovery
DOI: 10.1002/lpor.202501297
Publisher version: https://doi.org/10.1002/lpor.202501297
Language: English
Additional information: © 2025 The Author(s). Laser & Photonics Reviews published by Wiley-VCH GmbH. This is an open access article under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/).
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/10217011
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