Yuan, Jiajing;
Jia, Hui;
Dear, Calum;
Deng, Huiwen;
Masteghin, Mateus G;
EL HAJRAOUI, Khalil;
Li, Jun;
... Liu, Huiyun; + view all
(2025)
C-band InAs/InP quantum dots: alternative growth versus indium-flush for self-assembled growth.
Semiconductor Science and Technology
10.1088/1361-6641/ae10d5.
(In press).
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Abstract
1550 nm InAs/InP quantum dot (QD) lasers are critical for C-band optical communication. To realise narrow photoluminescence linewidth emission in this wavelength range, alternative growth (AG) and indium flush (IF) techniques have been developed for self-assembled QDs, enabling wavelength tuning and control of dot uniformity. This work investigates the stacking effect on nanostructures grown by these two methods by comparing five-stacked AG and IF nanostructures with identical spacer thickness. Structural and optical characterisations were performed using scanning transmission electron microscopy, atomic force microscopy, and photoluminescence measurements. The IF approach produces truncated, heightcontrolled QDs with reduced strain accumulation across stacked layers. In contrast, AG samples display quantum well-like morphology with sharp interfaces and no observable dislocations, but fail to consistently produce distinct QD nanostructures. These results suggest that IF provides a more reliable optimisation strategy for achieving C-band QDs within the framework of self-assembled growth, whereas AG requires further optimisation for use in InP-based systems.
| Type: | Article |
|---|---|
| Title: | C-band InAs/InP quantum dots: alternative growth versus indium-flush for self-assembled growth |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1088/1361-6641/ae10d5 |
| Publisher version: | https://doi.org/10.1088/1361-6641/ae10d5 |
| Language: | English |
| Additional information: | As the Version of Record of this article is going to be / has been published on a gold open access basis under a CC BY 4.0 licence, this Accepted Manuscript is available for reuse under a CC BY 4.0 licence immediately. Everyone is permitted to use all or part of the original content in this article, provided that they adhere to all the terms of the licence https://creativecommons.org/licences/by/4.0 Although reasonable endeavours have been taken to obtain all necessary permissions from third parties to include their copyrighted content within this article, their full citation and copyright line may not be present in this Accepted Manuscript version. Before using any content from this article, please refer to the Version of Record on IOPscience once published for full citation and copyright details, as permissions may be required. All third party content is fully copyright protected and is not published on a gold open access basis under a CC BY licence, unless that is specifically stated in the figure caption in the Version of Record. |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10215578 |
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