Mtunzi, Makhayeni;
Zeng, Haotian;
Bao, Lifeng;
Chen, Chong;
Park, Jae-Seong;
Deng, Huiwen;
Wang, Yangqian;
... Liu, Huiyun; + view all
(2025)
MBE growth of InAs/GaAs quantum dot lasers on V-grooved (001) Si.
Journal of Physics D: Applied Physics
10.1088/1361-6463/ae074b.
(In press).
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Abstract
The monolithic integration of InAs/GaAs quantum dot (QD) lasers on the silicon platform is critical for current high-speed optical communication and computing systems. However, the heteroepitaxial growth of high-performance InAs/GaAs QD lasers on complementary metal-oxide-semiconductor-compatible on-axis (001) Si substrates remains challenging due to the crystalline defects arising from substantial material dissimilarities. In this work, we present InAs/GaAs QD lasers grown entirely by molecular beam epitaxy (MBE) directly on pre-patterned V-grooved (001) Si substrates. Unlike previous approaches that combine MOCVD and MBE processes or employ homoepitaxial Si regrowth to form (111) facets, our method uses substrates with pre-defined (111) facet exposure, avoiding additional surface engineering. The combination of the V-grooved geometry of the substrate and the stepped growth method enables antiphase boundary-free GaAs buffer growth. Further optimisation of InAlAs/GaAs dislocation filtering layers and QD growth parameters yielded a threading dislocation density of 2.91 × 107 cm-2 and room-temperature emission around 1.3 μm was achieved. With the improved buffer, O-band lasing up to 90 °C has been demonstrated for InAs/GaAs QD lasers. This structure offers a simplified and thermally robust route for monolithic QD laser integration, potentially supporting scalable silicon photonic platforms.
| Type: | Article |
|---|---|
| Title: | MBE growth of InAs/GaAs quantum dot lasers on V-grooved (001) Si |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1088/1361-6463/ae074b |
| Publisher version: | https://doi.org/10.1088/1361-6463/ae074b |
| Language: | English |
| Additional information: | As the Version of Record of this article is going to be / has been published on a gold open access basis under a CC BY 4.0 licence, this Accepted Manuscript is available for reuse under a CC BY 4.0 licence immediately. Everyone is permitted to use all or part of the original content in this article, provided that they adhere to all the terms of the licence https://creativecommons.org/licences/by/4.0 |
| Keywords: | InAs/GaAs QDs, MBE, V-groove Si |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10214089 |
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