Vivian, C;
Seddon, J;
Skandalos, I;
Tang, M;
Gardes, FY;
Liu, H;
Seeds, AJ;
(2025)
Modelling of a narrow linewidth monolithically integrated quantum dot-on-silicon extended cavity laser.
In: Reed, Graham T and Bradley, Jonathan, (eds.)
Proceedings of SPIE - The International Society for Optical Engineering.
(pp. p. 40).
SPIE: San Francisco, California, United States.
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Abstract
This work reports on the modelling of an on-chip extended cavity laser (ECL) formed of III/V quantum dots (QDs) monolithically grown on silicon and integrated with a silicon nitride waveguide layer which contains a second-order, surface-etched Bragg grating. A coupling coefficient of 47 cm−1 was extracted from full-wave simulations in CST Studio Suite. Combining this with measurements from a Fabry-Perot QD laser predicts a spectral linewidth for the proposed three-section ECL as low as 17 kHz. This is an order of magnitude smaller than commercial O-band lasers, highlighting the capabilities of QDs directly grown on silicon for advancing silicon photonic systems that require high coherence.
| Type: | Proceedings paper |
|---|---|
| Title: | Modelling of a narrow linewidth monolithically integrated quantum dot-on-silicon extended cavity laser |
| Event: | Silicon Photonics XX (OPTO, 2025) |
| Dates: | 25 Jan 2025 - 31 Jan 2025 |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1117/12.3042230 |
| Publisher version: | https://doi.org/10.1117/12.3042230 |
| Language: | English |
| Additional information: | This version is the version of record. For information on re-use, please refer to the publisher’s terms and conditions. |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10208488 |
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