Mishra, P;
Jarvis, L;
Hodges, C;
Enderson, A;
Albeladi, F;
Gillgrass, SJ;
Forrest, R;
... Smowton, PM; + view all
(2024)
Achieving O-Band InAs Quantum Dot Laser Operation at 200 °C.
In:
2024 IEEE 29th International Semiconductor Laser Conference (ISLC).
IEEE: Orlando, FL, USA.
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Abstract
We demonstrate O-band InAs quantum dot laser operation up to 202°C. A Fabry Perot laser device with as-cleaved facets and a co-doped scheme within the active region enables ultra-high temperature laser operation without requiring high-reflective facet coatings.
| Type: | Proceedings paper |
|---|---|
| Title: | Achieving O-Band InAs Quantum Dot Laser Operation at 200 °C |
| Event: | 2024 IEEE 29th International Semiconductor Laser Conference (ISLC) |
| Location: | FL, Orlando |
| Dates: | 29 Sep 2024 - 2 Oct 2024 |
| ISBN-13: | 979-8-3503-7300-4 |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1109/ISLC57752.2024.10717409 |
| Publisher version: | https://doi.org/10.1109/islc57752.2024.10717409 |
| Language: | English |
| Additional information: | This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions. |
| Keywords: | Quantum dot lasers, Coatings |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10205285 |
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