Williams, James Mark;
(2024)
Modelling Silicon Quantum Dot
Devices in the Few-Electron Regime.
Doctoral thesis (Ph.D), UCL (University College London).
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Abstract
This thesis examines the modelling and simulation of silicon quantum dot device design for application in quantum computing, in the few electron regime. I focus on the ap- plication of the Poisson and Schrödinger equations to understand device physics and to infer design choices for a future quantum computing platform in silicon nanostructures. In order to study the reliability and predictability of the devices we use classical electro- statics techniques to examine the capacitive network with devices to infer geometrical information from devices, and we examine the quantum behaviour of quantum dot inter- action as a first step towards realising qubit gates and coupling between quantum dots. Firstly I investigate the use of floating gates to enable two-dimensional arrays of silicon nanowires. I study the capacitive network between remote quantum dots and build a model to show the coupling strength as a function of distance, as support to experimen- tal work in demonstrating progress towards long range qubit coupling and embedded charge sensors. Finally I examine the simulation extraction of the tunnel coupling for various device geometries and geometric parameters, in which we seek to find a fast and robust way to find operable tunnel coupling regimes for the eventual use of a two-qubit gate. This thesis aims to show the early building blocks that will be needed to create a fully quantum electronic design automation toolkit
| Type: | Thesis (Doctoral) |
|---|---|
| Qualification: | Ph.D |
| Title: | Modelling Silicon Quantum Dot Devices in the Few-Electron Regime |
| Language: | English |
| Additional information: | Copyright © The Author 2024. Original content in this thesis is licensed under the terms of the Creative Commons Attribution-NonCommercial 4.0 International (CC BY-NC 4.0) Licence (https://creativecommons.org/licenses/by-nc/4.0/). Any third-party copyright material present remains the property of its respective owner(s) and is licensed under its existing terms. Access may initially be restricted at the author’s request. |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10200828 |
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