Mishra, P;
Jarvis, L;
Hodges, C;
Gillgrass, SJ;
Forrest, R;
Butkovicova, D;
Allford, CP;
... Smowton, PM; + view all
(2024)
Achieving InAs Quantum Dot Laser Operation at and Beyond 150 °C.
In:
Proceedings of the CLEO: Applications and Technology 2024.
(pp. pp. 1-2).
Optica Publishing Group
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CLEO Abstract_Final_PM.pdf - Accepted Version Access restricted to UCL open access staff until 11 May 2025. Download (1MB) |
Abstract
We achieved InAs quantum dot-based laser operation up to 170 °C by adopting a codoped active region, including p-modulation doping and direct n-type doping in the InAs quantum dots, without resorting to high-reflectivity facet-coatings.
| Type: | Proceedings paper |
|---|---|
| Title: | Achieving InAs Quantum Dot Laser Operation at and Beyond 150 °C |
| Event: | CLEO: Applications and Technology 2024 |
| DOI: | 10.1364/CLEO_AT.2024.ATh3O.2 |
| Publisher version: | https://doi.org/10.1364/CLEO_AT.2024.ATh3O.2 |
| Language: | English |
| Additional information: | This version is the author accepted manuscript. For information on re-use, please refer to the publisher's terms and conditions. |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10198397 |
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