Effects of phosphorous and antimony doping on thin Ge layers grown on Si

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Effects of phosphorous and antimony doping on thin Ge layers grown on Si

Yu, Xueying; Jia, Hui; Yang, Junjie; Masteghin, Mateus G; Beere, Harvey; Mtunzi, Makhayeni; Deng, Huiwen; ... Liu, Huiyun; + view all (2024) Effects of phosphorous and antimony doping on thin Ge layers grown on Si. Scientific Reports , 14 , Article 7969. 10.1038/s41598-024-57937-8. Green open access

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Abstract

Suppression of threading dislocations (TDs) in thin germanium (Ge) layers grown on silicon (Si) substrates has been critical for realizing high-performance Si-based optoelectronic and electronic devices. An advanced growth strategy is desired to minimize the TD density within a thin Ge buffer layer in Ge-on-Si systems. In this work, we investigate the impact of P dopants in 500-nm thin Ge layers, with doping concentrations from 1 to 50 × 1018 cm-3. The introduction of P dopants has efficiently promoted TD reduction, whose potential mechanism has been explored by comparing it to the well-established Sb-doped Ge-on-Si system. P and Sb dopants reveal different defect-suppression mechanisms in Ge-on-Si samples, inspiring a novel co-doping technique by exploiting the advantages of both dopants. The surface TDD of the Ge buffer has been further reduced by the co-doping technique to the order of 107 cm-2 with a thin Ge layer (of only 500 nm), which could provide a high-quality platform for high-performance Si-based semiconductor devices.

Type:	Article
Title:	Effects of phosphorous and antimony doping on thin Ge layers grown on Si
Location:	England
Open access status:	An open access version is available from UCL Discovery
DOI:	10.1038/s41598-024-57937-8
Publisher version:	https://doi.org/10.1038/s41598-024-57937-8
Language:	English
Additional information:	This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.
UCL classification:	UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI:	https://discovery.ucl.ac.uk/id/eprint/10190498