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Modelling the effects of p-modulation doping in InAs/InGaAs quantum dot devices

Maglio, Benjamin; Jarvis, Lydia; Tang, Mingchu; Liu, Huiyun; Smowton, Peter M; (2024) Modelling the effects of p-modulation doping in InAs/InGaAs quantum dot devices. Optical and Quantum Electronics , 56 (4) , Article 687. 10.1007/s11082-024-06362-2. Green open access

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Abstract

A modelling routine has been developed to quantify effects present in p-modulation doped 1.3 μm InAs/InGaAs quantum dot laser and modulator devices. Utilising experimentally verified parameters, calculated modal absorption is compared to measurements, prior to simulation of structures under reverse and forward bias. Observed broadening and a reduction of absorption in p-doped structures is attributed primarily to increased carrier scattering rates and can bring benefit when structures are configured as optical modulators with enhancements in the figure of merit. However, increased carrier scattering limits the maximum modal gain that can be achieved for lasers. The state filling caused by p-doping only marginally reduces absorption but assists laser operation with increased differential gain and gain magnitude at lower current densities.

Type: Article
Title: Modelling the effects of p-modulation doping in InAs/InGaAs quantum dot devices
Open access status: An open access version is available from UCL Discovery
DOI: 10.1007/s11082-024-06362-2
Publisher version: http://dx.doi.org/10.1007/s11082-024-06362-2
Language: English
Additional information: © 2024 Springer Nature. This article is licensed under a Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/).
Keywords: p-modulation doping, Quantum dot lasers, Quantum confined Stark effect, Photonic integration
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/10189950
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