Li, Bing;
Pan, Genhua;
Awan, Shakil A;
Avent, Neil;
(2014)
Techniques for Production of Large Area Graphene for Electronic and Sensor Device Applications.
Graphene and 2D Materials
, 1
(1)
pp. 47-58.
10.2478/gpe-2014-0003.
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Abstract
Here we review commonly used techniques for the production of large area and high quality graphene to meet the requirements of industrial applications, including epitaxial growth on SiC, chemical vapour deposition (CVD) on transition metals and growth from solid carbon source. The review makes a comparison of the growth mechanisms, quality (such as mobility and homogeneity) and properties of the resultant graphene, limitations and the prospect of each production method. A particular focus of the review is on direct (transfer free) growth on dielectric substrate as this is potentially one of the promising techniques for graphene production which can readily be integrated into existing semiconductor fabrication processes.
| Type: | Article |
|---|---|
| Title: | Techniques for Production of Large Area Graphene for Electronic and Sensor Device Applications |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.2478/gpe-2014-0003 |
| Publisher version: | http://dx.doi.org/10.2478/gpe-2014-0003 |
| Language: | English |
| Additional information: | © 2014 Bing Li et al., licensee De Gruyter Open. This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivs 3.0 License. |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > MAPS Faculty Office UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > MAPS Faculty Office > Institute for Materials Discovery |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10181539 |
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