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Thin-film design of amorphous hafnium oxide nanocomposites enabling strong interfacial resistive switching uniformity

Hellenbrand, Markus; Bakhit, Babak; Dou, Hongyi; Xiao, Ming; Hill, Megan O; Sun, Zhuotong; Mehonic, Adnan; ... MacManus-Driscoll, Judith L; + view all (2023) Thin-film design of amorphous hafnium oxide nanocomposites enabling strong interfacial resistive switching uniformity. Science Advances , 9 (25) , Article eadg1946. 10.1126/sciadv.adg1946. Green open access

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Abstract

A design concept of phase-separated amorphous nanocomposite thin films is presented that realizes interfacial resistive switching (RS) in hafnium oxide-based devices. The films are formed by incorporating an average of 7% Ba into hafnium oxide during pulsed laser deposition at temperatures ≤400°C. The added Ba prevents the films from crystallizing and leads to ∼20-nm-thin films consisting of an amorphous HfOx host matrix interspersed with ∼2-nm-wide, ∼5-to-10-nm-pitch Ba-rich amorphous nanocolumns penetrating approximately two-thirds through the films. This restricts the RS to an interfacial Schottky-like energy barrier whose magnitude is tuned by ionic migration under an applied electric field. Resulting devices achieve stable cycle-to-cycle, device-to-device, and sample-to-sample reproducibility with a measured switching endurance of ≥104 cycles for a memory window ≥10 at switching voltages of ±2 V. Each device can be set to multiple intermediate resistance states, which enables synaptic spike-timing-dependent plasticity. The presented concept unlocks additional design variables for RS devices.

Type: Article
Title: Thin-film design of amorphous hafnium oxide nanocomposites enabling strong interfacial resistive switching uniformity
Location: United States
Open access status: An open access version is available from UCL Discovery
DOI: 10.1126/sciadv.adg1946
Publisher version: https://doi.org/10.1126/sciadv.adg1946
Language: English
Additional information: Copyright © 2023 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution License 4.0 (CC BY). https://creativecommons.org/licenses/by/4.0/ This is an open-access article distributed under the terms of the Creative Commons Attribution license, which permits which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/10172652
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