Kennedy, OW;
O'Sullivan, J;
Zollitsch, CW;
Thomas, CN;
Withington, S;
Morton, JJ;
(2021)
Strain in heterogeneous quantum devices with atomic layer deposition.
Materials for Quantum Technology
, 1
(4)
, Article 045002. 10.1088/2633-4356/AC2EF7.
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Abstract
We investigated the use of dielectric layers produced by atomic layer deposition (ALD) as an approach to strain mitigation in composite silicon/superconductor devices operating at cryogenic temperatures. We show that the addition of an ALD layer acts to reduce the strain of spins closest to silicon/superconductor interface where strain is highest. We show that appropriately biasing our devices at the hyperfine clock transition of bismuth donors in silicon, we can remove strain broadening and that the addition of ALD layers left T2 (or temporal inhomogeneities) unchanged in these natural silicon devices.
| Type: | Article |
|---|---|
| Title: | Strain in heterogeneous quantum devices with atomic layer deposition |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1088/2633-4356/AC2EF7 |
| Publisher version: | http://doi.org/10.1088/2633-4356/AC2EF7 |
| Language: | English |
| Additional information: | Original content from this work may be used under the terms of the Creative Commons Attribution 4.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. |
| Keywords: | Strain, ESR, quantum memory, atomic layer deposition |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > Dept of Physics and Astronomy |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10169670 |
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