Patel, N;
Fonseka, HA;
Zhang, Y;
Church, S;
Al-Abri, R;
Sanchez, A;
Liu, H;
(2023)
Improving Quantum Well Tube Homogeneity Using Strained Nanowire Heterostructures.
ACS Applied Materials and Interfaces
, 15
(8)
pp. 10958-10964.
10.1021/acsami.2c22591.
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Abstract
Bottom-up grown nanostructures often suffer from significant dimensional inhomogeneity, and for quantum confined heterostructures, this can lead to a corresponding large variation in electronic properties. A high-throughput characterization methodology is applied to >15,000 nanoskived sections of highly strained GaAsP/GaAs radial core/shell quantum well heterostructures revealing high emission uniformity. While scanning electron microscopy shows a wide nanowire diameter spread of 540-60+60 nm, photoluminescence reveals a tightly bounded band-to-band transition energy of 1546-3+4 meV. A highly strained core/shell nanowire design is shown to reduce the dependence of emission on the quantum well width variation significantly more than in the unstrained case.
Type: | Article |
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Title: | Improving Quantum Well Tube Homogeneity Using Strained Nanowire Heterostructures |
Location: | United States |
Open access status: | An open access version is available from UCL Discovery |
DOI: | 10.1021/acsami.2c22591 |
Publisher version: | https://doi.org/10.1021/acsami.2c22591 |
Language: | English |
Additional information: | Copyright © 2023 The Authors. Published by American Chemical Society. This is an open access article under the CC BY 4.0 license Attribution 4.0 International (https://creativecommons.org/licenses/by/4.0/) |
Keywords: | heterostructure, high-throughput study, homogeneity, nanowire, quantum well, semiconductor |
UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
URI: | https://discovery.ucl.ac.uk/id/eprint/10165776 |
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