Jarvis, L;
Maglio, B;
Allford, CP;
Gillgrass, S;
Enderson, A;
Shutts, S;
Deng, H;
... Smowton, PM; + view all
(2022)
1.3-μm InAs Quantum Dot Lasers with P-type modulation and direct N-type co-doping.
In:
Conference Digest - IEEE International Semiconductor Laser Conference.
IEEE: Matsue, Japan.
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Abstract
O-band quantum dot lasers with co-doping reduce threshold current density relative to the undoped case, for 1mm long uncoated lasers from 245Acm-2 to 132Acm-2 at 27°C and 731Acm-2 to 312Acm-2 at 97°C. Improvements are also significant compared to lasers employing any one doping strategy.
| Type: | Proceedings paper |
|---|---|
| Title: | 1.3-μm InAs Quantum Dot Lasers with P-type modulation and direct N-type co-doping |
| Event: | 2022 28th International Semiconductor Laser Conference (ISLC) |
| Dates: | 16 Oct 2022 - 19 Oct 2022 |
| ISBN-13: | 9784885523359 |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.23919/ISLC52947.2022.9943351 |
| Publisher version: | https://doi.org/10.23919/ISLC52947.2022.9943351 |
| Language: | English |
| Additional information: | This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions. |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10164303 |
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