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The Epitaxial Growth and Unique Morphology of InAs Quantum Dots Embedded in a Ge Matrix

Jia, Hui; Yang, Junjie; Tang, Mingchu; Li, Wei; Jurczak, Pamela; Yu, Xuezhe; Zhou, Taojie; ... Liu, Huiyun; + view all (2022) The Epitaxial Growth and Unique Morphology of InAs Quantum Dots Embedded in a Ge Matrix. Journal of Physics D: Applied Physics 10.1088/1361-6463/ac95a3. (In press). Green open access

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Abstract

In this work, we investigated the epitaxial growth of InAs quantum dots (QDs) on Ge substrates. By varying the growth parameters of growth temperature, deposition thickness and growth rate of InAs, a high density of 1.2 ×1011 cm-2 self-assembled InAs QDs were successfully epitaxially grown on Ge substrates by solid-source molecular beam epitaxy (MBE) and capped by Ge layers. Pyramidal- and polyhedral-shaped InAs QDs embedded in Ge matrices were revealed, which are distinct from the lens- or truncated pyramid-shape dots in InAs/GaAs or InAs/Si systems. Moreover, with 200 nm Ge capping layer, one third of the embedded QDs are found with ellipse and hexagonal nanovoids with sizes of 7 – 9 nm, which is observed for the first time for InAs QDs embedded in a Ge matrix to the best of our knowledge. These results provide a new possibility of integrating InAs QD devices on Group-IV platforms for Si photonics.

Type: Article
Title: The Epitaxial Growth and Unique Morphology of InAs Quantum Dots Embedded in a Ge Matrix
Open access status: An open access version is available from UCL Discovery
DOI: 10.1088/1361-6463/ac95a3
Publisher version: https://doi.org/10.1088/1361-6463/ac95a3
Language: English
Additional information: © 2022 The Author(s). Published by IOP Publishing Ltd. As the Version of Record of this article is going to be/has been published on a gold open access basis under a CC BY 3.0 licence, this Accepted Manuscript is available for reuse under a CC BY 3.0 licence immediately.
UCL classification: UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL
URI: https://discovery.ucl.ac.uk/id/eprint/10157272
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