Huang, Y;
Zhou, T;
Tang, M;
Xiang, G;
Li, H;
Martin, M;
Baron, T;
... Zhang, Z; + view all
(2022)
Highly integrated photonic crystal bandedge lasers monolithically grown on Si substrates.
Chinese Optics Letters
, 20
(4)
, Article 041401. 10.3788/COL202220.041401.
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Abstract
Monolithic integration of III-V lasers with small footprint, good coherence, and low power consumption based on a CMOS-compatible Si substrate have been known as an efficient route towards high-density optical interconnects in the photonic integrated circuits. However, the material dissimilarities between Si and III-V materials limit the performance of monolithic microlasers. Here, under the pumping condition of a continuous-wave 632.8 nm He–Ne gas laser at room temperature, we achieved an InAs/GaAs quantum dot photonic crystal bandedge laser, which is directly grown on an on-axis Si (001) substrate, which provides a feasible route towards a low-cost and large-scale integration method for light sources on the Si platform.
| Type: | Article |
|---|---|
| Title: | Highly integrated photonic crystal bandedge lasers monolithically grown on Si substrates |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.3788/COL202220.041401 |
| Publisher version: | http://dx.doi.org/10.3788/COL202220.041401 |
| Language: | English |
| Additional information: | This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions. |
| Keywords: | bandedge, lasers, monolithic integration, photonic crystal, quantum dots, silicon substrate |
| UCL classification: | UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng UCL > Provost and Vice Provost Offices > UCL BEAMS UCL |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10148341 |
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